In our device concept the thermoelectric elements consist of n- and p-type semiconductor materials which are separately produced and optimized on two different wafers. After sawing, the n- and p-parts are bonded together to single devices.

The manufacturing process uses micro electronic techniques. Standard silicon/silicondioxide wafers are used as substrate. The thermoelectric Bi2Te3-related materials are deposited via sputtering. Finally, n- and p-wafers are structured by dry etching.
Wafers are sawn into single n- and p-type dies. Soldering the n- and p-parts together produces Micropelt Peltier cooler devices and Micropelt thermogenerator devices.

Sputtered thermoelectrical material with contact structure

Structured half side of one chip

One leg from above

Cross-section through one thermoeletric leg


Targeted applications are mainly around room temperature.