In our device concept the thermoelectric elements consist of n- and p-type semiconductor materials which are separately produced and optimized on two different wafers. After sawing, the n- and p-parts are bonded together to single devices.
The manufacturing process uses micro electronic techniques. Standard silicon/silicondioxide wafers are used as substrate. The thermoelectric Bi2Te3-related materials are deposited via sputtering. Finally, n- and p-wafers are structured by dry etching.
Wafers are sawn into single n- and p-type dies. Soldering the n- and p-parts together produces Micropelt Peltier cooler devices and Micropelt thermogenerator devices.
Sputtered thermoelectrical material with contact structure
Structured half side of one chip
One leg from above
Thermogenerator legs from above
Cross-section through one thermoeletric leg
Targeted applications are mainly around room temperature.